NDS9936 by onsemi – Specifications

onsemi NDS9936 is a NDS9936 from onsemi, part of the MOSFETs. It is designed for 30V 5A 900mW 50mΩ@5A,10V 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 5A
  • Power Dissipation (Pd): 900mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 525pF@15V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.

Full Specifications of NDS9936

Model NumberNDS9936
Model Nameonsemi NDS9936
CategoryMOSFETs
Brandonsemi
Description30V 5A 900mW 50mΩ@5A,10V 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.215 grams / 0.007584 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)5A
Power Dissipation (Pd)900mW
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@5A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)525pF@15V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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