onsemi NDS9953A is a NDS9953A from onsemi, part of the MOSFETs. It is designed for 30V 2.9A 900mW 130mΩ@1A,10V 2.8V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 2.9A
- Power Dissipation (Pd): 900mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@1A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
- Type: 2 P-Channel
- Input Capacitance (Ciss@Vds): 350pF@10V
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.
More on NDS9953A
Full Specifications of NDS9953A
| Model Number | NDS9953A |
| Model Name | onsemi NDS9953A |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 2.9A 900mW 130mΩ@1A,10V 2.8V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.215 grams / 0.007584 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 2.9A |
| Power Dissipation (Pd) | 900mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 130mΩ@1A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.8V@250uA |
| Type | 2 P-Channel |
| Input Capacitance (Ciss@Vds) | 350pF@10V |
| Total Gate Charge (Qg@Vgs) | 25nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |