NJVMJD127T4 by onsemi – Specifications

onsemi NJVMJD127T4 is a NJVMJD127T4 from onsemi, part of the Darlington Transistors. It is designed for 1000@4A,4V 100V PNP 8A 20W DPAK Darlington Transistors ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:

  • DC current gain (hFE@Vce,Ic): 1000@4A,4V
  • Collector-emitter voltage (Vceo): 100V
  • Transistor Type: PNP
  • Collector cut-off current (Icbo@Vcb): 10uA
  • Collector Current (Ic): 8A
  • Operating Temperature: -65℃~+150℃@(Tj)
  • Power Dissipation (Pd): 20W
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@80mA,8A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.466 grams.

Full Specifications of NJVMJD127T4

Model NumberNJVMJD127T4
Model Nameonsemi NJVMJD127T4
CategoryDarlington Transistors
Brandonsemi
Description1000@4A,4V 100V PNP 8A 20W DPAK Darlington Transistors ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.466 grams / 0.016438 oz
Package / CaseDPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
DC current gain (hFE@Vce,Ic)1000@4A,4V
Collector-emitter voltage (Vceo)100V
Transistor TypePNP
Transition frequency (fT)-
Collector cut-off current (Icbo@Vcb)10uA
Collector Current (Ic)8A
Operating Temperature-65℃~+150℃@(Tj)
Power Dissipation (Pd)20W
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)4V@80mA,8A

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