NJVNJD35N04G by onsemi – Specifications

onsemi NJVNJD35N04G is a NJVNJD35N04G from onsemi, part of the Darlington Transistors. It is designed for 350V 2000@2V,2A NPN 4A 45W DPAK Darlington Transistors ROHS. This product comes in a DPAK package and is sold as Tube-packed. Key features include:

  • Collector-emitter voltage (Vceo): 350V
  • DC current gain (hFE@Vce,Ic): 2000@2V,2A
  • Transistor Type: NPN
  • Transition frequency (fT): 90MHz
  • Collector cut-off current (Icbo@Vcb): 50uA
  • Collector Current (Ic): 4A
  • Operating Temperature: -65℃~+150℃@(Tj)
  • Power Dissipation (Pd): 45W
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1.5V@2A,20mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.494 grams.

Full Specifications of NJVNJD35N04G

Model NumberNJVNJD35N04G
Model Nameonsemi NJVNJD35N04G
CategoryDarlington Transistors
Brandonsemi
Description350V 2000@2V,2A NPN 4A 45W DPAK Darlington Transistors ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.494 grams / 0.017425 oz
Package / CaseDPAK
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Collector-emitter voltage (Vceo)350V
DC current gain (hFE@Vce,Ic)2000@2V,2A
Transistor TypeNPN
Transition frequency (fT)90MHz
Collector cut-off current (Icbo@Vcb)50uA
Collector Current (Ic)4A
Operating Temperature-65℃~+150℃@(Tj)
Power Dissipation (Pd)45W
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)1.5V@2A,20mA

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