onsemi NJVNJD35N04G is a NJVNJD35N04G from onsemi, part of the Darlington Transistors. It is designed for 350V 2000@2V,2A NPN 4A 45W DPAK Darlington Transistors ROHS. This product comes in a DPAK package and is sold as Tube-packed. Key features include:
- Collector-emitter voltage (Vceo): 350V
- DC current gain (hFE@Vce,Ic): 2000@2V,2A
- Transistor Type: NPN
- Transition frequency (fT): 90MHz
- Collector cut-off current (Icbo@Vcb): 50uA
- Collector Current (Ic): 4A
- Operating Temperature: -65℃~+150℃@(Tj)
- Power Dissipation (Pd): 45W
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1.5V@2A,20mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.494 grams.
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Full Specifications of NJVNJD35N04G
Model Number | NJVNJD35N04G |
Model Name | onsemi NJVNJD35N04G |
Category | Darlington Transistors |
Brand | onsemi |
Description | 350V 2000@2V,2A NPN 4A 45W DPAK Darlington Transistors ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.494 grams / 0.017425 oz |
Package / Case | DPAK |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Collector-emitter voltage (Vceo) | 350V |
DC current gain (hFE@Vce,Ic) | 2000@2V,2A |
Transistor Type | NPN |
Transition frequency (fT) | 90MHz |
Collector cut-off current (Icbo@Vcb) | 50uA |
Collector Current (Ic) | 4A |
Operating Temperature | -65℃~+150℃@(Tj) |
Power Dissipation (Pd) | 45W |
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 1.5V@2A,20mA |