onsemi NRVTS660MFDT1G is a NRVTS660MFDT1G from onsemi, part of the Schottky Barrier Diodes (SBD). It is designed for 60V 2 Independent 550mV@6A 3A DFN-8 Schottky Barrier Diodes (SBD) ROHS. This product comes in a DFN-8 package and is sold as Tape & Reel (TR). Key features include:
- Reverse Leakage Current (Ir): 6.2uA@60V
- Reverse Voltage (Vr): 60V
- Diode Configuration: 2 Independent
- Forward Voltage (Vf@If): 550mV@6A
- Average Rectified Current (Io): 3A
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NRVTS660MFDT1G
Full Specifications of NRVTS660MFDT1G
| Model Number | NRVTS660MFDT1G |
| Model Name | onsemi NRVTS660MFDT1G |
| Category | Schottky Barrier Diodes (SBD) |
| Brand | onsemi |
| Description | 60V 2 Independent 550mV@6A 3A DFN-8 Schottky Barrier Diodes (SBD) ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | DFN-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Reverse Leakage Current (Ir) | 6.2uA@60V |
| Reverse Voltage (Vr) | 60V |
| Diode Configuration | 2 Independent |
| Forward Voltage (Vf@If) | 550mV@6A |
| Average Rectified Current (Io) | 3A |
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