onsemi NTB082N65S3F is a NTB082N65S3F from onsemi, part of the MOSFETs. It is designed for 650V 40A 70mΩ@10V,20A 313W 5V@1mA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 40A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 70mΩ@10V,20A
- Power Dissipation (Pd): 313W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@1mA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.41nF@400V
- Total Gate Charge (Qg@Vgs): 81nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.44 grams.
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Full Specifications of NTB082N65S3F
| Model Number | NTB082N65S3F |
| Model Name | onsemi NTB082N65S3F |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 650V 40A 70mΩ@10V,20A 313W 5V@1mA 1PCSNChannel D2PAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.440 grams / 0.050795 oz |
| Package / Case | D2PAK |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 40A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 70mΩ@10V,20A |
| Power Dissipation (Pd) | 313W |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@1mA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 3.41nF@400V |
| Total Gate Charge (Qg@Vgs) | 81nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |