onsemi NTB095N65S3HF is a NTB095N65S3HF from onsemi, part of the MOSFETs. It is designed for 650V 36A 80mΩ@10V,18A 272W 5V@860uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 36A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@10V,18A
- Power Dissipation (Pd): 272W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@860uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.93nF@400V
- Total Gate Charge (Qg@Vgs): 66nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.57 grams.
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Full Specifications of NTB095N65S3HF
Model Number | NTB095N65S3HF |
Model Name | onsemi NTB095N65S3HF |
Category | MOSFETs |
Brand | onsemi |
Description | 650V 36A 80mΩ@10V,18A 272W 5V@860uA 1PCSNChannel D2PAK MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.570 grams / 0.05538 oz |
Package / Case | D2PAK |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 36A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 80mΩ@10V,18A |
Power Dissipation (Pd) | 272W |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@860uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.93nF@400V |
Total Gate Charge (Qg@Vgs) | 66nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |