NTBGS3D5N06C by onsemi – Specifications

onsemi NTBGS3D5N06C is a NTBGS3D5N06C from onsemi, part of the MOSFETs. It is designed for 60V 3.25mΩ@10V,12A 4V@122uA 1PCSNChannel TO-263-7 MOSFETs ROHS. This product comes in a TO-263-7 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 22A;127A
  • Power Dissipation (Pd): 3.7W;115W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.25mΩ@10V,12A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@122uA
  • Reverse Transfer Capacitance (Crss@Vds): 21pF@30V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.43nF@30V
  • Total Gate Charge (Qg@Vgs): 39nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.494 grams.

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Full Specifications of NTBGS3D5N06C

Model NumberNTBGS3D5N06C
Model Nameonsemi NTBGS3D5N06C
CategoryMOSFETs
Brandonsemi
Description60V 3.25mΩ@10V,12A 4V@122uA 1PCSNChannel TO-263-7 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.494 grams / 0.017425 oz
Package / CaseTO-263-7
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)22A;127A
Power Dissipation (Pd)3.7W;115W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.25mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)@Id)4V@122uA
Reverse Transfer Capacitance (Crss@Vds)21pF@30V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.43nF@30V
Total Gate Charge (Qg@Vgs)39nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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