NTBLS1D7N08H by onsemi – Specifications

onsemi NTBLS1D7N08H is a NTBLS1D7N08H from onsemi, part of the MOSFETs. It is designed for 80V 203A 167W 1.29mΩ@10V,80A 2.9V@479uA 1PCSNChannel H-PSOF-8L MOSFETs ROHS. This product comes in a H-PSOF-8L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 203A
  • Power Dissipation (Pd): 167W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.29mΩ@10V,80A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.9V@479uA
  • Reverse Transfer Capacitance (Crss@Vds): 41pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.675nF@40V
  • Total Gate Charge (Qg@Vgs): 121nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.494 grams.

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Full Specifications of NTBLS1D7N08H

Model NumberNTBLS1D7N08H
Model Nameonsemi NTBLS1D7N08H
CategoryMOSFETs
Brandonsemi
Description80V 203A 167W 1.29mΩ@10V,80A 2.9V@479uA 1PCSNChannel H-PSOF-8L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.494 grams / 0.017425 oz
Package / CaseH-PSOF-8L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)203A
Power Dissipation (Pd)167W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.29mΩ@10V,80A
Gate Threshold Voltage (Vgs(th)@Id)2.9V@479uA
Reverse Transfer Capacitance (Crss@Vds)41pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.675nF@40V
Total Gate Charge (Qg@Vgs)121nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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