NTBS2D7N06M7 by onsemi – Specifications

onsemi NTBS2D7N06M7 is a NTBS2D7N06M7 from onsemi, part of the MOSFETs. It is designed for 60V 110A 2.2mΩ@10V,80A 176W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 110A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2mΩ@10V,80A
  • Power Dissipation (Pd): 176W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 57pF@30V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.655nF@30V
  • Total Gate Charge (Qg@Vgs): 110nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.27 grams.

Full Specifications of NTBS2D7N06M7

Model NumberNTBS2D7N06M7
Model Nameonsemi NTBS2D7N06M7
CategoryMOSFETs
Brandonsemi
Description60V 110A 2.2mΩ@10V,80A 176W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.270 grams / 0.080072 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)110A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.2mΩ@10V,80A
Power Dissipation (Pd)176W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)57pF@30V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.655nF@30V
Total Gate Charge (Qg@Vgs)110nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare onsemi - NTBS2D7N06M7 With Other 200 Models

Related Models - NTBS2D7N06M7 Alternative

Scroll to Top