NTF3055-100T1G-IRH1 by onsemi – Specifications

onsemi NTF3055-100T1G-IRH1 is a NTF3055-100T1G-IRH1 from onsemi, part of the MOSFETs. It is designed for 60V 3A 88mΩ@2.5V,1.5A 2.1W 3V@250uA 1PCSNChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 88mΩ@2.5V,1.5A
  • Power Dissipation (Pd): 2.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 110pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 324pF@25V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.323 grams.

More on NTF3055-100T1G-IRH1

Full Specifications of NTF3055-100T1G-IRH1

Model NumberNTF3055-100T1G-IRH1
Model Nameonsemi NTF3055-100T1G-IRH1
CategoryMOSFETs
Brandonsemi
Description60V 3A 88mΩ@2.5V,1.5A 2.1W 3V@250uA 1PCSNChannel SOT-223-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.323 grams / 0.011394 oz
Package / CaseSOT-223-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)3A
Drain Source On Resistance (RDS(on)@Vgs,Id)88mΩ@2.5V,1.5A
Power Dissipation (Pd)2.1W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)110pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)324pF@25V
Total Gate Charge (Qg@Vgs)-
Operating Temperature-55℃~+175℃@(Tj)

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