NTH4L040N65S3F by onsemi – Specifications

onsemi NTH4L040N65S3F is a NTH4L040N65S3F from onsemi, part of the MOSFETs. It is designed for 650V 65A 40mΩ@32.5A,10V 446W [email protected] 1PCSNChannel TO-247-4 MOSFETs ROHS. This product comes in a TO-247-4 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 65A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@32.5A,10V
  • Power Dissipation (Pd): 446W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.94nF@400V
  • Total Gate Charge (Qg@Vgs): 158nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of NTH4L040N65S3F

Model NumberNTH4L040N65S3F
Model Nameonsemi NTH4L040N65S3F
CategoryMOSFETs
Brandonsemi
Description650V 65A 40mΩ@32.5A,10V 446W [email protected] 1PCSNChannel TO-247-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-4
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)65A
Drain Source On Resistance (RDS(on)@Vgs,Id)40mΩ@32.5A,10V
Power Dissipation (Pd)446W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.94nF@400V
Total Gate Charge (Qg@Vgs)158nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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