NTH4L080N120SC1 by onsemi – Specifications

onsemi NTH4L080N120SC1 is a NTH4L080N120SC1 from onsemi, part of the MOSFETs. It is designed for 1.2kV 29A 80mΩ@20V,20A 170W 4.3V@5mA 1PCSNChannel TO-247-4 MOSFETs ROHS. This product comes in a TO-247-4 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 1.2kV
  • Continuous Drain Current (Id): 29A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@20V,20A
  • Power Dissipation (Pd): 170W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.3V@5mA
  • Reverse Transfer Capacitance (Crss@Vds): 6.5pF@800V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.67nF@800V
  • Total Gate Charge (Qg@Vgs): 56nC@20V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.43 grams.

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Full Specifications of NTH4L080N120SC1

Model NumberNTH4L080N120SC1
Model Nameonsemi NTH4L080N120SC1
CategoryMOSFETs
Brandonsemi
Description1.2kV 29A 80mΩ@20V,20A 170W 4.3V@5mA 1PCSNChannel TO-247-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.430 grams / 0.29736 oz
Package / CaseTO-247-4
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)1.2kV
Continuous Drain Current (Id)29A
Drain Source On Resistance (RDS(on)@Vgs,Id)80mΩ@20V,20A
Power Dissipation (Pd)170W
Gate Threshold Voltage (Vgs(th)@Id)4.3V@5mA
Reverse Transfer Capacitance (Crss@Vds)6.5pF@800V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.67nF@800V
Total Gate Charge (Qg@Vgs)56nC@20V
Operating Temperature-55℃~+175℃@(Tj)

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