onsemi NTHL041N60S5H is a NTHL041N60S5H from onsemi, part of the MOSFETs. It is designed for 600V 57A 32.8mΩ@10V,28.5A 329W [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 57A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 32.8mΩ@10V,28.5A
- Power Dissipation (Pd): 329W
- Gate Threshold Voltage (Vgs(th)@Id): [email protected]
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 5.84nF@400V
- Total Gate Charge (Qg@Vgs): 108nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.1 grams.
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Full Specifications of NTHL041N60S5H
Model Number | NTHL041N60S5H |
Model Name | onsemi NTHL041N60S5H |
Category | MOSFETs |
Brand | onsemi |
Description | 600V 57A 32.8mΩ@10V,28.5A 329W [email protected] 1PCSNChannel TO-247-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 7.100 grams / 0.250445 oz |
Package / Case | TO-247-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 57A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 32.8mΩ@10V,28.5A |
Power Dissipation (Pd) | 329W |
Gate Threshold Voltage (Vgs(th)@Id) | [email protected] |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 5.84nF@400V |
Total Gate Charge (Qg@Vgs) | 108nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |