onsemi NTJD4105CT1G is a NTJD4105CT1G from onsemi, part of the MOSFETs. It is designed for 375mΩ@630mA,4.5V 270mW 1.5V@250uA 1PCSNChannel+1PCSPChannel SC-88-6 MOSFETs ROHS. This product comes in a SC-88-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V;8V
- Continuous Drain Current (Id): 630mA;775mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 375mΩ@630mA,4.5V
- Power Dissipation (Pd): 270mW
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Type: 1PCSNChannel+1PCSPChannel
- Input Capacitance (Ciss@Vds): 46pF@20V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.029 grams.
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Full Specifications of NTJD4105CT1G
Model Number | NTJD4105CT1G |
Model Name | onsemi NTJD4105CT1G |
Category | MOSFETs |
Brand | onsemi |
Description | 375mΩ@630mA,4.5V 270mW 1.5V@250uA 1PCSNChannel+1PCSPChannel SC-88-6 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.029 grams / 0.001023 oz |
Package / Case | SC-88-6 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V;8V |
Continuous Drain Current (Id) | 630mA;775mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 375mΩ@630mA,4.5V |
Power Dissipation (Pd) | 270mW |
Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
Type | 1PCSNChannel+1PCSPChannel |
Input Capacitance (Ciss@Vds) | 46pF@20V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |