NTJD4105CT1G by onsemi – Specifications

onsemi NTJD4105CT1G is a NTJD4105CT1G from onsemi, part of the MOSFETs. It is designed for 375mΩ@630mA,4.5V 270mW 1.5V@250uA 1PCSNChannel+1PCSPChannel SC-88-6 MOSFETs ROHS. This product comes in a SC-88-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V;8V
  • Continuous Drain Current (Id): 630mA;775mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 375mΩ@630mA,4.5V
  • Power Dissipation (Pd): 270mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 46pF@20V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.029 grams.

Full Specifications of NTJD4105CT1G

Model NumberNTJD4105CT1G
Model Nameonsemi NTJD4105CT1G
CategoryMOSFETs
Brandonsemi
Description375mΩ@630mA,4.5V 270mW 1.5V@250uA 1PCSNChannel+1PCSPChannel SC-88-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.029 grams / 0.001023 oz
Package / CaseSC-88-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V;8V
Continuous Drain Current (Id)630mA;775mA
Drain Source On Resistance (RDS(on)@Vgs,Id)375mΩ@630mA,4.5V
Power Dissipation (Pd)270mW
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)46pF@20V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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