onsemi NTJD4152PT2G is a NTJD4152PT2G from onsemi, part of the MOSFETs. It is designed for 20V 880mA 272mW 260mΩ@880mA,4.5V 1.2V@250uA 2 P-Channel SOT-363-6 MOSFETs ROHS. This product comes in a SOT-363-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 880mA
- Power Dissipation (Pd): 272mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 260mΩ@880mA,4.5V
- Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
- Type: 2 P-Channel
- Input Capacitance (Ciss@Vds): 155pF@20V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NTJD4152PT2G
Full Specifications of NTJD4152PT2G
| Model Number | NTJD4152PT2G |
| Model Name | onsemi NTJD4152PT2G |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 20V 880mA 272mW 260mΩ@880mA,4.5V 1.2V@250uA 2 P-Channel SOT-363-6 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | SOT-363-6 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 880mA |
| Power Dissipation (Pd) | 272mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 260mΩ@880mA,4.5V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
| Type | 2 P-Channel |
| Input Capacitance (Ciss@Vds) | 155pF@20V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | -55℃~+150℃@(Tj) |