onsemi NTK3139PT1G is a NTK3139PT1G from onsemi, part of the MOSFETs. It is designed for 20V 660mA 480mΩ@780mA,4.5V 310mW 1.2V@250uA 1PCSPChannel SOT-723 MOSFETs ROHS. This product comes in a SOT-723 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 660mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 480mΩ@780mA,4.5V
- Power Dissipation (Pd): 310mW
- Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 170pF@16V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.02 grams.
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Full Specifications of NTK3139PT1G
Model Number | NTK3139PT1G |
Model Name | onsemi NTK3139PT1G |
Category | MOSFETs |
Brand | onsemi |
Description | 20V 660mA 480mΩ@780mA,4.5V 310mW 1.2V@250uA 1PCSPChannel SOT-723 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.020 grams / 0.000705 oz |
Package / Case | SOT-723 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 660mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 480mΩ@780mA,4.5V |
Power Dissipation (Pd) | 310mW |
Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 170pF@16V |
Total Gate Charge (Qg@Vgs) | - |
Operating Temperature | -55℃~+150℃@(Tj) |