onsemi NTMD3P03R2G is a NTMD3P03R2G from onsemi, part of the MOSFETs. It is designed for 30V 2.34A 85mΩ@10V,3.05A 730mW 2.5V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 2.34A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 85mΩ@10V,3.05A
- Power Dissipation (Pd): 730mW
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 2 P-Channel
- Input Capacitance (Ciss@Vds): 750pF@24V
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.126 grams.
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Full Specifications of NTMD3P03R2G
| Model Number | NTMD3P03R2G |
| Model Name | onsemi NTMD3P03R2G |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 2.34A 85mΩ@10V,3.05A 730mW 2.5V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.126 grams / 0.004445 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 2.34A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 85mΩ@10V,3.05A |
| Power Dissipation (Pd) | 730mW |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 2 P-Channel |
| Input Capacitance (Ciss@Vds) | 750pF@24V |
| Total Gate Charge (Qg@Vgs) | 25nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |