onsemi NTMFD5C680NLT1G is a NTMFD5C680NLT1G from onsemi, part of the MOSFETs. It is designed for 60V 28mΩ@5A,10V 2.2V@13uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS. This product comes in a DFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 7.5A;26A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 28mΩ@5A,10V
- Power Dissipation (Pd): 3W;19W
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@13uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 350pF@25V
- Total Gate Charge (Qg@Vgs): 5nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NTMFD5C680NLT1G
Full Specifications of NTMFD5C680NLT1G
Model Number | NTMFD5C680NLT1G |
Model Name | onsemi NTMFD5C680NLT1G |
Category | MOSFETs |
Brand | onsemi |
Description | 60V 28mΩ@5A,10V 2.2V@13uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | DFN-8(5x6) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 7.5A;26A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 28mΩ@5A,10V |
Power Dissipation (Pd) | 3W;19W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.2V@13uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 2 N-Channel |
Input Capacitance (Ciss@Vds) | 350pF@25V |
Total Gate Charge (Qg@Vgs) | 5nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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