NTMFS022N15MC by onsemi – Specifications

onsemi NTMFS022N15MC is a NTMFS022N15MC from onsemi, part of the MOSFETs. It is designed for 150V 41.9A 18.1mΩ@10V,18A 80.6W 4.5V@100uA 1PCSNChannel PQFN-8(4.9x5.8) MOSFETs ROHS. This product comes in a PQFN-8(4.9x5.8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 41.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18.1mΩ@10V,18A
  • Power Dissipation (Pd): 80.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@100uA
  • Reverse Transfer Capacitance (Crss@Vds): 6pF@75V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.315nF@75V
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.494 grams.

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Full Specifications of NTMFS022N15MC

Model NumberNTMFS022N15MC
Model Nameonsemi NTMFS022N15MC
CategoryMOSFETs
Brandonsemi
Description150V 41.9A 18.1mΩ@10V,18A 80.6W 4.5V@100uA 1PCSNChannel PQFN-8(4.9x5.8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.494 grams / 0.017425 oz
Package / CasePQFN-8(4.9x5.8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)41.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)18.1mΩ@10V,18A
Power Dissipation (Pd)80.6W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@100uA
Reverse Transfer Capacitance (Crss@Vds)6pF@75V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.315nF@75V
Total Gate Charge (Qg@Vgs)17nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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