NTMFS4837NHT1G by onsemi – Specifications

onsemi NTMFS4837NHT1G is a NTMFS4837NHT1G from onsemi, part of the MOSFETs. It is designed for 30V 75A 3.7mΩ@10~11.5V,30A 48W 2.1V@250uA 1PCSNChannel SO-8-FL-5.9mm MOSFETs ROHS. This product comes in a SO-8-FL-5.9mm package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 75A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.7mΩ@10~11.5V,30A
  • Power Dissipation (Pd): 48W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 243pF@12V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.234nF@12V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.22 grams.

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Full Specifications of NTMFS4837NHT1G

Model NumberNTMFS4837NHT1G
Model Nameonsemi NTMFS4837NHT1G
CategoryMOSFETs
Brandonsemi
Description30V 75A 3.7mΩ@10~11.5V,30A 48W 2.1V@250uA 1PCSNChannel SO-8-FL-5.9mm MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.220 grams / 0.00776 oz
Package / CaseSO-8-FL-5.9mm
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)75A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.7mΩ@10~11.5V,30A
Power Dissipation (Pd)48W
Gate Threshold Voltage (Vgs(th)@Id)2.1V@250uA
Reverse Transfer Capacitance (Crss@Vds)243pF@12V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.234nF@12V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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