NTMFS4D2N10MDT1G by onsemi – Specifications

onsemi NTMFS4D2N10MDT1G is a NTMFS4D2N10MDT1G from onsemi, part of the MOSFETs. It is designed for 100V 113A 3.8mΩ@10V,46A 132W 4V@239uA 1PCSNChannel DFN-5(5.1x6.1) MOSFETs ROHS. This product comes in a DFN-5(5.1x6.1) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 113A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.8mΩ@10V,46A
  • Power Dissipation (Pd): 132W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@239uA
  • Reverse Transfer Capacitance (Crss@Vds): 23pF@50V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.1nF@50V
  • Total Gate Charge (Qg@Vgs): 25nC@6V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.

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Full Specifications of NTMFS4D2N10MDT1G

Model NumberNTMFS4D2N10MDT1G
Model Nameonsemi NTMFS4D2N10MDT1G
CategoryMOSFETs
Brandonsemi
Description100V 113A 3.8mΩ@10V,46A 132W 4V@239uA 1PCSNChannel DFN-5(5.1x6.1) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.300 grams / 0.010582 oz
Package / CaseDFN-5(5.1x6.1)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)113A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.8mΩ@10V,46A
Power Dissipation (Pd)132W
Gate Threshold Voltage (Vgs(th)@Id)4V@239uA
Reverse Transfer Capacitance (Crss@Vds)23pF@50V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.1nF@50V
Total Gate Charge (Qg@Vgs)25nC@6V
Operating Temperature-55℃~+150℃@(Tj)

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