onsemi NTMFS4H01NFT3G is a NTMFS4H01NFT3G from onsemi, part of the MOSFETs. It is designed for 25V 334A 0.56mΩ@10V,30A 125W 2.1V@250uA 1PCSNChannel SO-8FL-EP-5.8mm MOSFETs ROHS. This product comes in a SO-8FL-EP-5.8mm package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 25V
- Continuous Drain Current (Id): 334A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 0.56mΩ@10V,30A
- Power Dissipation (Pd): 125W
- Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 175.3pF@12V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 5.538nF@12V
- Total Gate Charge (Qg@Vgs): [email protected]
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NTMFS4H01NFT3G
Full Specifications of NTMFS4H01NFT3G
| Model Number | NTMFS4H01NFT3G |
| Model Name | onsemi NTMFS4H01NFT3G |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 25V 334A 0.56mΩ@10V,30A 125W 2.1V@250uA 1PCSNChannel SO-8FL-EP-5.8mm MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | SO-8FL-EP-5.8mm |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 25V |
| Continuous Drain Current (Id) | 334A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.56mΩ@10V,30A |
| Power Dissipation (Pd) | 125W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 175.3pF@12V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 5.538nF@12V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | - |