NTMFS5C404NLT1G by onsemi – Specifications

onsemi NTMFS5C404NLT1G is a NTMFS5C404NLT1G from onsemi, part of the MOSFETs. It is designed for 40V 0.75mΩ@50A,10V 2V@250uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS. This product comes in a DFN-5(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 52A;370A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 0.75mΩ@50A,10V
  • Power Dissipation (Pd): 3.2W;167W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 12.168nF@25V
  • Total Gate Charge (Qg@Vgs): 181nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.18 grams.

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Full Specifications of NTMFS5C404NLT1G

Model NumberNTMFS5C404NLT1G
Model Nameonsemi NTMFS5C404NLT1G
CategoryMOSFETs
Brandonsemi
Description40V 0.75mΩ@50A,10V 2V@250uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.180 grams / 0.006349 oz
Package / CaseDFN-5(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)52A;370A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.75mΩ@50A,10V
Power Dissipation (Pd)3.2W;167W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)12.168nF@25V
Total Gate Charge (Qg@Vgs)181nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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