onsemi NTMFS5C410NLT1G is a NTMFS5C410NLT1G from onsemi, part of the MOSFETs. It is designed for 40V 50A 0.82mΩ@10V,50A 3.2W 2V@250uA 1PCSNChannel DFN-5(5.1x6.1) MOSFETs ROHS. This product comes in a DFN-5(5.1x6.1) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 50A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 0.82mΩ@10V,50A
- Power Dissipation (Pd): 3.2W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.
More on NTMFS5C410NLT1G
Full Specifications of NTMFS5C410NLT1G
Model Number | NTMFS5C410NLT1G |
Model Name | onsemi NTMFS5C410NLT1G |
Category | MOSFETs |
Brand | onsemi |
Description | 40V 50A 0.82mΩ@10V,50A 3.2W 2V@250uA 1PCSNChannel DFN-5(5.1x6.1) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.300 grams / 0.010582 oz |
Package / Case | DFN-5(5.1x6.1) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 50A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.82mΩ@10V,50A |
Power Dissipation (Pd) | 3.2W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Type | 1PCSNChannel |
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