onsemi NTMFS6H801NLT1G is a NTMFS6H801NLT1G from onsemi, part of the MOSFETs. It is designed for 80V 160A 2.2mΩ@10V,50A 167W 2V@250uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS. This product comes in a DFN-5(5.9x4.9) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 160A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2mΩ@10V,50A
- Power Dissipation (Pd): 167W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 30pF@40V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 5.126nF@40V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.192 grams.
More on NTMFS6H801NLT1G
Full Specifications of NTMFS6H801NLT1G
Model Number | NTMFS6H801NLT1G |
Model Name | onsemi NTMFS6H801NLT1G |
Category | MOSFETs |
Brand | onsemi |
Description | 80V 160A 2.2mΩ@10V,50A 167W 2V@250uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.192 grams / 0.006773 oz |
Package / Case | DFN-5(5.9x4.9) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 80V |
Continuous Drain Current (Id) | 160A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.2mΩ@10V,50A |
Power Dissipation (Pd) | 167W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 30pF@40V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 5.126nF@40V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+175℃@(Tj) |