NTMFS6H801NLT1G by onsemi – Specifications

onsemi NTMFS6H801NLT1G is a NTMFS6H801NLT1G from onsemi, part of the MOSFETs. It is designed for 80V 160A 2.2mΩ@10V,50A 167W 2V@250uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS. This product comes in a DFN-5(5.9x4.9) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 160A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2mΩ@10V,50A
  • Power Dissipation (Pd): 167W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 30pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.126nF@40V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.192 grams.

Full Specifications of NTMFS6H801NLT1G

Model NumberNTMFS6H801NLT1G
Model Nameonsemi NTMFS6H801NLT1G
CategoryMOSFETs
Brandonsemi
Description80V 160A 2.2mΩ@10V,50A 167W 2V@250uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.192 grams / 0.006773 oz
Package / CaseDFN-5(5.9x4.9)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)160A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.2mΩ@10V,50A
Power Dissipation (Pd)167W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)30pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.126nF@40V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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