NTMFSC2D9N08H by onsemi – Specifications

onsemi NTMFSC2D9N08H is a NTMFSC2D9N08H from onsemi, part of the MOSFETs. It is designed for 80V 2.9mΩ@50A,10V 4V@250uA 1PCSNChannel DFN-8(5x6.15) MOSFETs ROHS. This product comes in a DFN-8(5x6.15) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 23A;154A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@50A,10V
  • Power Dissipation (Pd): 3.8W;166W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.38nF@40V
  • Total Gate Charge (Qg@Vgs): 68nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.194 grams.

Full Specifications of NTMFSC2D9N08H

Model NumberNTMFSC2D9N08H
Model Nameonsemi NTMFSC2D9N08H
CategoryMOSFETs
Brandonsemi
Description80V 2.9mΩ@50A,10V 4V@250uA 1PCSNChannel DFN-8(5x6.15) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.194 grams / 0.006843 oz
Package / CaseDFN-8(5x6.15)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)23A;154A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9mΩ@50A,10V
Power Dissipation (Pd)3.8W;166W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.38nF@40V
Total Gate Charge (Qg@Vgs)68nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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