NTMJS1D15N03CGTWG by onsemi – Specifications

onsemi NTMJS1D15N03CGTWG is a NTMJS1D15N03CGTWG from onsemi, part of the MOSFETs. It is designed for 30V 1.15mΩ@20A,10V 2.2V@160uA 1PCSNChannel LFPAK-8 MOSFETs ROHS. This product comes in a LFPAK-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 45A;257A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.15mΩ@20A,10V
  • Power Dissipation (Pd): 3.8W;125W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@160uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.3nF@15V
  • Total Gate Charge (Qg@Vgs): 94nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on NTMJS1D15N03CGTWG

Full Specifications of NTMJS1D15N03CGTWG

Model NumberNTMJS1D15N03CGTWG
Model Nameonsemi NTMJS1D15N03CGTWG
CategoryMOSFETs
Brandonsemi
Description30V 1.15mΩ@20A,10V 2.2V@160uA 1PCSNChannel LFPAK-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseLFPAK-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)45A;257A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.15mΩ@20A,10V
Power Dissipation (Pd)3.8W;125W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@160uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.3nF@15V
Total Gate Charge (Qg@Vgs)94nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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