onsemi NTMS7N03R2G is a NTMS7N03R2G from onsemi, part of the MOSFETs. It is designed for 30V 4.8A 23mΩ@10V,7A 800mW 3V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 4.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@10V,7A
- Power Dissipation (Pd): 800mW
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.207 grams.
More on NTMS7N03R2G
Full Specifications of NTMS7N03R2G
| Model Number | NTMS7N03R2G |
| Model Name | onsemi NTMS7N03R2G |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 4.8A 23mΩ@10V,7A 800mW 3V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.207 grams / 0.007302 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 4.8A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 23mΩ@10V,7A |
| Power Dissipation (Pd) | 800mW |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |