onsemi NTMT185N60S5H is a NTMT185N60S5H from onsemi, part of the MOSFETs. It is designed for 600V 15A 116W 185mΩ@7.5A,10V [email protected] 1PCSNChannel TDFN-4(8x8) MOSFETs ROHS. This product comes in a TDFN-4(8x8) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 15A
- Power Dissipation (Pd): 116W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 185mΩ@7.5A,10V
- Gate Threshold Voltage (Vgs(th)@Id): [email protected]
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.35nF@400V
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of NTMT185N60S5H
Model Number | NTMT185N60S5H |
Model Name | onsemi NTMT185N60S5H |
Category | MOSFETs |
Brand | onsemi |
Description | 600V 15A 116W 185mΩ@7.5A,10V [email protected] 1PCSNChannel TDFN-4(8x8) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TDFN-4(8x8) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 15A |
Power Dissipation (Pd) | 116W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 185mΩ@7.5A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | [email protected] |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.35nF@400V |
Total Gate Charge (Qg@Vgs) | 25nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |