NTP055N65S3H by onsemi – Specifications

onsemi NTP055N65S3H is a NTP055N65S3H from onsemi, part of the MOSFETs. It is designed for 650V 47A 45mΩ@10V,23.5A 305W [email protected] 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 47A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 45mΩ@10V,23.5A
  • Power Dissipation (Pd): 305W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.305nF@400V
  • Total Gate Charge (Qg@Vgs): 96nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.

Full Specifications of NTP055N65S3H

Model NumberNTP055N65S3H
Model Nameonsemi NTP055N65S3H
CategoryMOSFETs
Brandonsemi
Description650V 47A 45mΩ@10V,23.5A 305W [email protected] 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.680 grams / 0.094534 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)47A
Drain Source On Resistance (RDS(on)@Vgs,Id)45mΩ@10V,23.5A
Power Dissipation (Pd)305W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.305nF@400V
Total Gate Charge (Qg@Vgs)96nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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