onsemi NTP125N65S3H is a NTP125N65S3H from onsemi, part of the MOSFETs. It is designed for 650V 24A 171W 108mΩ@10V,12A [email protected] 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 24A
- Power Dissipation (Pd): 171W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 108mΩ@10V,12A
- Gate Threshold Voltage (Vgs(th)@Id): [email protected]
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.2nF@400V
- Total Gate Charge (Qg@Vgs): 44nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.9 grams.
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Full Specifications of NTP125N65S3H
| Model Number | NTP125N65S3H |
| Model Name | onsemi NTP125N65S3H |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 650V 24A 171W 108mΩ@10V,12A [email protected] 1PCSNChannel TO-220-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.900 grams / 0.102295 oz |
| Package / Case | TO-220-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 24A |
| Power Dissipation (Pd) | 171W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 108mΩ@10V,12A |
| Gate Threshold Voltage (Vgs(th)@Id) | [email protected] |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2.2nF@400V |
| Total Gate Charge (Qg@Vgs) | 44nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |