NTP165N65S3H by onsemi – Specifications

onsemi NTP165N65S3H is a NTP165N65S3H from onsemi, part of the MOSFETs. It is designed for 650V 19A 142W 132mΩ@10V,9.5A [email protected] 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 19A
  • Power Dissipation (Pd): 142W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 132mΩ@10V,9.5A
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.808nF@400V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.06 grams.

More on NTP165N65S3H

Full Specifications of NTP165N65S3H

Model NumberNTP165N65S3H
Model Nameonsemi NTP165N65S3H
CategoryMOSFETs
Brandonsemi
Description650V 19A 142W 132mΩ@10V,9.5A [email protected] 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.060 grams / 0.107938 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)19A
Power Dissipation (Pd)142W
Drain Source On Resistance (RDS(on)@Vgs,Id)132mΩ@10V,9.5A
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.808nF@400V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - NTP165N65S3H With Other 200 Models

Related Models - NTP165N65S3H Alternative

Scroll to Top