onsemi NTPF082N65S3F is a NTPF082N65S3F from onsemi, part of the MOSFETs. It is designed for 650V 40A 82mΩ@20A,10V 48W 5V@4mA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 40A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 82mΩ@20A,10V
- Power Dissipation (Pd): 48W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@4mA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.24nF@400V
- Total Gate Charge (Qg@Vgs): 70nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.8 grams.
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Full Specifications of NTPF082N65S3F
Model Number | NTPF082N65S3F |
Model Name | onsemi NTPF082N65S3F |
Category | MOSFETs |
Brand | onsemi |
Description | 650V 40A 82mΩ@20A,10V 48W 5V@4mA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.800 grams / 0.063493 oz |
Package / Case | TO-220 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 40A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 82mΩ@20A,10V |
Power Dissipation (Pd) | 48W |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@4mA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 3.24nF@400V |
Total Gate Charge (Qg@Vgs) | 70nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |