NTPF360N65S3H by onsemi – Specifications

onsemi NTPF360N65S3H is a NTPF360N65S3H from onsemi, part of the MOSFETs. It is designed for 650V 10A 26W 2.96mΩ@10V,5A 4V@700uA 1PCSNChannel TO-220FP MOSFETs ROHS. This product comes in a TO-220FP package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10A
  • Power Dissipation (Pd): 26W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.96mΩ@10V,5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@700uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 916pF@400V
  • Total Gate Charge (Qg@Vgs): 17.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.7 grams.

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Full Specifications of NTPF360N65S3H

Model NumberNTPF360N65S3H
Model Nameonsemi NTPF360N65S3H
CategoryMOSFETs
Brandonsemi
Description650V 10A 26W 2.96mΩ@10V,5A 4V@700uA 1PCSNChannel TO-220FP MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.700 grams / 0.09524 oz
Package / CaseTO-220FP
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)10A
Power Dissipation (Pd)26W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.96mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)@Id)4V@700uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)916pF@400V
Total Gate Charge (Qg@Vgs)17.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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