onsemi NTS4101PT1G is a NTS4101PT1G from onsemi, part of the MOSFETs. It is designed for 20V 1.37A 329mW 120mΩ@4.5V,1A 1.5V@250uA 1PCSPChannel SOT-323-3 MOSFETs ROHS. This product comes in a SOT-323-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 1.37A
- Power Dissipation (Pd): 329mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 120mΩ@4.5V,1A
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 840pF@20V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.032 grams.
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Full Specifications of NTS4101PT1G
| Model Number | NTS4101PT1G |
| Model Name | onsemi NTS4101PT1G |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 20V 1.37A 329mW 120mΩ@4.5V,1A 1.5V@250uA 1PCSPChannel SOT-323-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.032 grams / 0.001129 oz |
| Package / Case | SOT-323-3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 1.37A |
| Power Dissipation (Pd) | 329mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 120mΩ@4.5V,1A |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 840pF@20V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | -55℃~+150℃@(Tj) |