onsemi NTTFD021N08C is a NTTFD021N08C from onsemi, part of the MOSFETs. It is designed for 80V 21mΩ@7.8A,10V 4V@44uA 2 N-Channel WQFN-12(3.3x3.3) MOSFETs ROHS. This product comes in a WQFN-12(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 6A;24A
- Power Dissipation (Pd): 1.7W;26W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@7.8A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@44uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 572pF@40V
- Total Gate Charge (Qg@Vgs): 8.4nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.494 grams.
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Full Specifications of NTTFD021N08C
| Model Number | NTTFD021N08C |
| Model Name | onsemi NTTFD021N08C |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 80V 21mΩ@7.8A,10V 4V@44uA 2 N-Channel WQFN-12(3.3x3.3) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.494 grams / 0.017425 oz |
| Package / Case | WQFN-12(3.3x3.3) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 80V |
| Continuous Drain Current (Id) | 6A;24A |
| Power Dissipation (Pd) | 1.7W;26W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 21mΩ@7.8A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@44uA |
| Type | 2 N-Channel |
| Input Capacitance (Ciss@Vds) | 572pF@40V |
| Total Gate Charge (Qg@Vgs) | 8.4nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |