NTTFD022N10C by onsemi – Specifications

onsemi NTTFD022N10C is a NTTFD022N10C from onsemi, part of the MOSFETs. It is designed for 100V 25mΩ@7.8A,10V 4V@44uA 2 N-Channel WQFN-12(3.3x3.3) MOSFETs ROHS. This product comes in a WQFN-12(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 6A;24A
  • Power Dissipation (Pd): 1.7W;26W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@7.8A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@44uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 585pF@50V
  • Total Gate Charge (Qg@Vgs): 9nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.494 grams.

Full Specifications of NTTFD022N10C

Model NumberNTTFD022N10C
Model Nameonsemi NTTFD022N10C
CategoryMOSFETs
Brandonsemi
Description100V 25mΩ@7.8A,10V 4V@44uA 2 N-Channel WQFN-12(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.494 grams / 0.017425 oz
Package / CaseWQFN-12(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)6A;24A
Power Dissipation (Pd)1.7W;26W
Drain Source On Resistance (RDS(on)@Vgs,Id)25mΩ@7.8A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@44uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)585pF@50V
Total Gate Charge (Qg@Vgs)9nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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