NTTFS4C10NTAG by onsemi – Specifications

onsemi NTTFS4C10NTAG is a NTTFS4C10NTAG from onsemi, part of the MOSFETs. It is designed for 30V 7.4mΩ@10V,30A 2.2V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a WDFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 8.2A;44A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.4mΩ@10V,30A
  • Power Dissipation (Pd): 790mW;23.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 993pF@15V
  • Total Gate Charge (Qg@Vgs): 18.6nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.093 grams.

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Full Specifications of NTTFS4C10NTAG

Model NumberNTTFS4C10NTAG
Model Nameonsemi NTTFS4C10NTAG
CategoryMOSFETs
Brandonsemi
Description30V 7.4mΩ@10V,30A 2.2V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.093 grams / 0.00328 oz
Package / CaseWDFN-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)8.2A;44A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.4mΩ@10V,30A
Power Dissipation (Pd)790mW;23.6W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)993pF@15V
Total Gate Charge (Qg@Vgs)18.6nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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