onsemi NTZS3151PT1G is a NTZS3151PT1G from onsemi, part of the MOSFETs. It is designed for 20V 860mA 170mW 150mΩ@4.5V,900mA 1V@250uA 1PCSPChannel SOT-563 MOSFETs ROHS. This product comes in a SOT-563 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 860mA
- Power Dissipation (Pd): 170mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@4.5V,900mA
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 458pF@16V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.022 grams.
More on NTZS3151PT1G
Full Specifications of NTZS3151PT1G
Model Number | NTZS3151PT1G |
Model Name | onsemi NTZS3151PT1G |
Category | MOSFETs |
Brand | onsemi |
Description | 20V 860mA 170mW 150mΩ@4.5V,900mA 1V@250uA 1PCSPChannel SOT-563 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.022 grams / 0.000776 oz |
Package / Case | SOT-563 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 860mA |
Power Dissipation (Pd) | 170mW |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 150mΩ@4.5V,900mA |
Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 458pF@16V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |