NVD3055L170T4G-VF01 by onsemi – Specifications

onsemi NVD3055L170T4G-VF01 is a NVD3055L170T4G-VF01 from onsemi, part of the MOSFETs. It is designed for 60V 9A 170mΩ@4.5A,5V 28.5W 2V@250uA 1PCSNChannel DPAK-3 MOSFETs ROHS. This product comes in a DPAK-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 170mΩ@4.5A,5V
  • Power Dissipation (Pd): 28.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 275pF@25V
  • Total Gate Charge (Qg@Vgs): 10nC@5V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.379 grams.

More on NVD3055L170T4G-VF01

Full Specifications of NVD3055L170T4G-VF01

Model NumberNVD3055L170T4G-VF01
Model Nameonsemi NVD3055L170T4G-VF01
CategoryMOSFETs
Brandonsemi
Description60V 9A 170mΩ@4.5A,5V 28.5W 2V@250uA 1PCSNChannel DPAK-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.379 grams / 0.013369 oz
Package / CaseDPAK-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)9A
Drain Source On Resistance (RDS(on)@Vgs,Id)170mΩ@4.5A,5V
Power Dissipation (Pd)28.5W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)275pF@25V
Total Gate Charge (Qg@Vgs)10nC@5V
Operating Temperature-55℃~+175℃@(Tj)

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