onsemi NVD6495NLT4G-VF01 is a NVD6495NLT4G-VF01 from onsemi, part of the MOSFETs. It is designed for 100V 25A 50mΩ@10A,10V 83W 2V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 25A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10A,10V
- Power Dissipation (Pd): 83W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.024nF@25V
- Total Gate Charge (Qg@Vgs): 35nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.085 grams.
More on NVD6495NLT4G-VF01
Full Specifications of NVD6495NLT4G-VF01
Model Number | NVD6495NLT4G-VF01 |
Model Name | onsemi NVD6495NLT4G-VF01 |
Category | MOSFETs |
Brand | onsemi |
Description | 100V 25A 50mΩ@10A,10V 83W 2V@250uA 1PCSNChannel DPAK MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.085 grams / 0.002998 oz |
Package / Case | DPAK |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 25A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@10A,10V |
Power Dissipation (Pd) | 83W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.024nF@25V |
Total Gate Charge (Qg@Vgs) | 35nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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