NVD6495NLT4G-VF01 by onsemi – Specifications

onsemi NVD6495NLT4G-VF01 is a NVD6495NLT4G-VF01 from onsemi, part of the MOSFETs. It is designed for 100V 25A 50mΩ@10A,10V 83W 2V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 25A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10A,10V
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.024nF@25V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.085 grams.

Full Specifications of NVD6495NLT4G-VF01

Model NumberNVD6495NLT4G-VF01
Model Nameonsemi NVD6495NLT4G-VF01
CategoryMOSFETs
Brandonsemi
Description100V 25A 50mΩ@10A,10V 83W 2V@250uA 1PCSNChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.085 grams / 0.002998 oz
Package / CaseDPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@10A,10V
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.024nF@25V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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