NVH4L027N65S3F by onsemi – Specifications

onsemi NVH4L027N65S3F is a NVH4L027N65S3F from onsemi, part of the MOSFETs. It is designed for 650V 75A 27.4mΩ@35A,10V 595W 5V@3mA 1PCSNChannel TO-247-4L MOSFETs ROHS. This product comes in a TO-247-4L package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 75A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 27.4mΩ@35A,10V
  • Power Dissipation (Pd): 595W
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@3mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7.78nF@400V
  • Total Gate Charge (Qg@Vgs): 227nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.6 grams.

Full Specifications of NVH4L027N65S3F

Model NumberNVH4L027N65S3F
Model Nameonsemi NVH4L027N65S3F
CategoryMOSFETs
Brandonsemi
Description650V 75A 27.4mΩ@35A,10V 595W 5V@3mA 1PCSNChannel TO-247-4L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.600 grams / 0.303356 oz
Package / CaseTO-247-4L
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)75A
Drain Source On Resistance (RDS(on)@Vgs,Id)27.4mΩ@35A,10V
Power Dissipation (Pd)595W
Gate Threshold Voltage (Vgs(th)@Id)5V@3mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7.78nF@400V
Total Gate Charge (Qg@Vgs)227nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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