NVMFD5C668NLT1G by onsemi – Specifications

onsemi NVMFD5C668NLT1G is a NVMFD5C668NLT1G from onsemi, part of the MOSFETs. It is designed for 60V 68A 5.4mΩ@10V,20A 57.5W 2V@50uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS. This product comes in a DFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 68A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.4mΩ@10V,20A
  • Power Dissipation (Pd): 57.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@50uA
  • Reverse Transfer Capacitance (Crss@Vds): 14pF@25V
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 1.44nF@25V
  • Total Gate Charge (Qg@Vgs): 21.3nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

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Full Specifications of NVMFD5C668NLT1G

Model NumberNVMFD5C668NLT1G
Model Nameonsemi NVMFD5C668NLT1G
CategoryMOSFETs
Brandonsemi
Description60V 68A 5.4mΩ@10V,20A 57.5W 2V@50uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CaseDFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)68A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.4mΩ@10V,20A
Power Dissipation (Pd)57.5W
Gate Threshold Voltage (Vgs(th)@Id)2V@50uA
Reverse Transfer Capacitance (Crss@Vds)14pF@25V
Type2 N-Channel
Input Capacitance (Ciss@Vds)1.44nF@25V
Total Gate Charge (Qg@Vgs)21.3nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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