onsemi NVMFS040N10MCLT1G is a NVMFS040N10MCLT1G from onsemi, part of the MOSFETs. It is designed for 100V 38mΩ 3V@26uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS. This product comes in a DFN-5(5x6) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 6.5A;21A
- Power Dissipation (Pd): 3.5W;36W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 38mΩ
- Gate Threshold Voltage (Vgs(th)@Id): 3V@26uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 500pF@50V
- Total Gate Charge (Qg@Vgs): 8.3nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.16 grams.
More on NVMFS040N10MCLT1G
Full Specifications of NVMFS040N10MCLT1G
Model Number | NVMFS040N10MCLT1G |
Model Name | onsemi NVMFS040N10MCLT1G |
Category | MOSFETs |
Brand | onsemi |
Description | 100V 38mΩ 3V@26uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.160 grams / 0.005644 oz |
Package / Case | DFN-5(5x6) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 6.5A;21A |
Power Dissipation (Pd) | 3.5W;36W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 38mΩ |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@26uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 500pF@50V |
Total Gate Charge (Qg@Vgs) | 8.3nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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