NVMFS2D3P04M8LT1G by onsemi – Specifications

onsemi NVMFS2D3P04M8LT1G is a NVMFS2D3P04M8LT1G from onsemi, part of the MOSFETs. It is designed for 40V 2.2mΩ@30A,10V [email protected] 1PCSPChannel DFN-5(5x6)(SO-8FL) MOSFETs ROHS. This product comes in a DFN-5(5x6)(SO-8FL) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 31A;222A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2mΩ@30A,10V
  • Power Dissipation (Pd): 3.8W;205W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 5.985nF@20V
  • Total Gate Charge (Qg@Vgs): 157nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.152 grams.

More on NVMFS2D3P04M8LT1G

Full Specifications of NVMFS2D3P04M8LT1G

Model NumberNVMFS2D3P04M8LT1G
Model Nameonsemi NVMFS2D3P04M8LT1G
CategoryMOSFETs
Brandonsemi
Description40V 2.2mΩ@30A,10V [email protected] 1PCSPChannel DFN-5(5x6)(SO-8FL) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.152 grams / 0.005362 oz
Package / CaseDFN-5(5x6)(SO-8FL)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)31A;222A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.2mΩ@30A,10V
Power Dissipation (Pd)3.8W;205W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSPChannel
Input Capacitance (Ciss@Vds)5.985nF@20V
Total Gate Charge (Qg@Vgs)157nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare onsemi - NVMFS2D3P04M8LT1G With Other 200 Models

Related Models - NVMFS2D3P04M8LT1G Alternative

Scroll to Top