NVMFS4C05NT1G by onsemi – Specifications

onsemi NVMFS4C05NT1G is a NVMFS4C05NT1G from onsemi, part of the MOSFETs. It is designed for 30V 2.3mΩ@10V,30A 2.2V@250uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS. This product comes in a DFN-5(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 24.7A;116A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3mΩ@10V,30A
  • Power Dissipation (Pd): 3.61W;79W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 59pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.972nF@15V
  • Total Gate Charge (Qg@Vgs): 30nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.2 grams.

More on NVMFS4C05NT1G

Full Specifications of NVMFS4C05NT1G

Model NumberNVMFS4C05NT1G
Model Nameonsemi NVMFS4C05NT1G
CategoryMOSFETs
Brandonsemi
Description30V 2.3mΩ@10V,30A 2.2V@250uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.200 grams / 0.007055 oz
Package / CaseDFN-5(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)24.7A;116A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.3mΩ@10V,30A
Power Dissipation (Pd)3.61W;79W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds)59pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.972nF@15V
Total Gate Charge (Qg@Vgs)30nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare onsemi - NVMFS4C05NT1G With Other 200 Models

Related Models - NVMFS4C05NT1G Alternative

Scroll to Top