onsemi NVMFS5826NLT1G is a NVMFS5826NLT1G from onsemi, part of the MOSFETs. It is designed for 60V 8A 18mΩ@10V,10A 3.6W 2.5V@250uA 1PCSNChannel SO-8-FL-5.8mm MOSFETs ROHS. This product comes in a SO-8-FL-5.8mm package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,10A
- Power Dissipation (Pd): 3.6W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 50pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 850pF@25V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NVMFS5826NLT1G
Full Specifications of NVMFS5826NLT1G
| Model Number | NVMFS5826NLT1G |
| Model Name | onsemi NVMFS5826NLT1G |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 8A 18mΩ@10V,10A 3.6W 2.5V@250uA 1PCSNChannel SO-8-FL-5.8mm MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | SO-8-FL-5.8mm |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 8A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 18mΩ@10V,10A |
| Power Dissipation (Pd) | 3.6W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 850pF@25V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | -55℃~+175℃@(Tj) |