NVMFS5834NLT1G by onsemi – Specifications

onsemi NVMFS5834NLT1G is a NVMFS5834NLT1G from onsemi, part of the MOSFETs. It is designed for 40V 75A 7.1mΩ@10V,20A 107W 3V@250uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS. This product comes in a DFN-5(5.9x4.9) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 75A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.1mΩ@10V,20A
  • Power Dissipation (Pd): 107W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 141pF@20V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.231nF@20V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of NVMFS5834NLT1G

Model NumberNVMFS5834NLT1G
Model Nameonsemi NVMFS5834NLT1G
CategoryMOSFETs
Brandonsemi
Description40V 75A 7.1mΩ@10V,20A 107W 3V@250uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDFN-5(5.9x4.9)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)75A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.1mΩ@10V,20A
Power Dissipation (Pd)107W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)141pF@20V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.231nF@20V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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