NVMFS5C460NLAFT3G by onsemi – Specifications

onsemi NVMFS5C460NLAFT3G is a NVMFS5C460NLAFT3G from onsemi, part of the MOSFETs. It is designed for 40V 4.5mΩ@35A,10V 2V@250uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS. This product comes in a DFN-5(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 21A;78A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@35A,10V
  • Power Dissipation (Pd): 3.6W;50W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.3nF@25V
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on NVMFS5C460NLAFT3G

Full Specifications of NVMFS5C460NLAFT3G

Model NumberNVMFS5C460NLAFT3G
Model Nameonsemi NVMFS5C460NLAFT3G
CategoryMOSFETs
Brandonsemi
Description40V 4.5mΩ@35A,10V 2V@250uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDFN-5(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)21A;78A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.5mΩ@35A,10V
Power Dissipation (Pd)3.6W;50W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.3nF@25V
Total Gate Charge (Qg@Vgs)23nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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